diff options
| -rw-r--r-- | chip/g/config_chip.h | 2 | ||||
| -rw-r--r-- | chip/g/flash.c | 6 | ||||
| -rw-r--r-- | include/config.h | 1 |
3 files changed, 6 insertions, 3 deletions
diff --git a/chip/g/config_chip.h b/chip/g/config_chip.h index f0c508e2e9..b531f5d8b3 100644 --- a/chip/g/config_chip.h +++ b/chip/g/config_chip.h @@ -22,6 +22,8 @@ #define CONFIG_FLASH_WRITE_SIZE 4 /* min write size (bytes) */ /* But we have a 32-word buffer for writing multiple adjacent cells */ #define CONFIG_FLASH_WRITE_IDEAL_SIZE 128 /* best write size (bytes) */ +/* The flash controller prevents bulk writes that cross row boundaries */ +#define CONFIG_FLASH_ROW_SIZE 256 /* row size */ /* Describe the flash layout */ #define CONFIG_PROGRAM_MEMORY_BASE 0x40000 diff --git a/chip/g/flash.c b/chip/g/flash.c index 6a329756a7..870f76ef34 100644 --- a/chip/g/flash.c +++ b/chip/g/flash.c @@ -311,10 +311,10 @@ static int flash_physical_write_internal(int byte_offset, int is_info_bank, num = MIN(num_bytes, CONFIG_FLASH_WRITE_IDEAL_SIZE); /* * Make sure that the write operation will not go - * past a CONFIG_FLASH_ERASE_SIZE boundary. + * past a CONFIG_FLASH_ROW_SIZE boundary. */ - num = MIN(num, CONFIG_FLASH_ERASE_SIZE - - byte_offset % CONFIG_FLASH_ERASE_SIZE); + num = MIN(num, CONFIG_FLASH_ROW_SIZE - + byte_offset % CONFIG_FLASH_ROW_SIZE); ret = write_batch(byte_offset, is_info_bank, num / 4, /* word count */ diff --git a/include/config.h b/include/config.h index 86964d1617..7a62d2988e 100644 --- a/include/config.h +++ b/include/config.h @@ -835,6 +835,7 @@ #undef CONFIG_FLASH_BANK_SIZE #undef CONFIG_FLASH_ERASED_VALUE32 #undef CONFIG_FLASH_ERASE_SIZE +#undef CONFIG_FLASH_ROW_SIZE /* Base address of program memory */ #undef CONFIG_PROGRAM_MEMORY_BASE |